• Part: STD8N06
  • Description: N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
  • Category: Transistor
  • Manufacturer: STMicroelectronics
  • Size: 171.58 KB
Download STD8N06 Datasheet PDF
STMicroelectronics
STD8N06
STD8N06 is N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR manufactured by STMicroelectronics.
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD8N06 s s s s s s s s V DSS 60 V R DS( on) < 0.25 Ω ID 8A s s TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW GATE CHARGE HIGH CURRENT CAPABILITY 175o C OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 IPAK TO-251 (Suffix ”-1”) DPAK TO-252 (Suffix ”T4”) APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) s INTERNAL SCHEMATIC...