STD8N06 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMicroelectronics

Datasheet Details

Part number	STD8N06
Manufacturer	STMicroelectronics
File Size	171.58 KB
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
Datasheet	STD8N06 Datasheet

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STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD8N06 s s s s s s s s V DSS 60 V R DS( on) < 0.25 Ω ID 8A s s TYPICAL RDS(on) = 0.21 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) 3 1 IPAK TO-251 (Suffix ”-1”) 2 1 DPAK TO-252 3 (Suffix ”T4”) APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s REGULATORS s DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.