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STD8NS25 Datasheet N-channel 250v - 0.38ohm - 8a Dpak Mesh Overlay MOSFET

Manufacturer: STMicroelectronics

Overview: N-CHANNEL 250V - 0.38Ω - 8A DPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STD8NS25 s s s STD8NS25 VDSS 250 V RDS(on) < 0.45 Ω ID 8A TYPICAL RDS(on) = 0.

General Description

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance.

The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.

DPAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max.

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