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STD95NH02L - N-CHANNEL STripFET MOSFET

General Description

oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology.

An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters.

Key Features

  • Type VDSS RDS(on) ID STD95NH02L )STD95NH02L-1 24V 24V < 0.005Ω < 0.005Ω t(s1. Value limited by wire bonding uc.
  • Conduction losses reduced d.
  • Switching losses reduced ro.
  • Low threshold device 80A(1) 80A(1) te P.

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STD95NH02L-1 STD95NH02L N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STD95NH02L )STD95NH02L-1 24V 24V < 0.005Ω < 0.005Ω t(s1. Value limited by wire bonding uc■ Conduction losses reduced d■ Switching losses reduced ro■ Low threshold device 80A(1) 80A(1) te PDescription oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology. An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters. It’s therefore ideal for high-density converters in Telecom and Computer capplications. roduApplication Obsolete P■ Switching applications 3 2 1 IPAK 3 1 DPAK Figure 1.