STD95NH02L Datasheet | STMicroelectronics

STD95NH02L-1 STD95NH02L N-channel 24V - 0.0039Ω - 80A - DPAK - IPAK Ultra low gate charge STrip FET™ Power MOSFET Features Type VDSS RDS(on) )STD95NH02L-1 24V 24V < 0.005Ω < 0.005Ω t(s1. Value limited by wire bonding uc- Conduction losses reduced d- Switching losses reduced ro- Low threshold device 80A(1) 80A(1) te PDescription ole The device is based on the latest generation of s ST’s proprietary STrip FET™ technology. An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters. It’s therefore ideal for high-density converters in Tele and puter capplications. rodu Application Obsolete P- Switching applications 3 2 1 IPAK 3 1 DPAK Figure 1. Internal schematic diagram Table 1. Device summary Order code STD95NH02LT4 STD95NH02L-1 Marking D95NH02L D95NH02L Package DPAK IPAK Packaging Tape & reel Tube August 2007 Rev 4 1/16 .st. Contents...