Datasheet Summary
STD95NH02L-1 STD95NH02L
N-channel 24V
- 0.0039Ω
- 80A
- DPAK
- IPAK Ultra low gate charge STripFET™ Power MOSFET
Features
Type
VDSS
RDS(on)
STD95NH02L
)STD95NH02L-1
24V 24V
< 0.005Ω < 0.005Ω t(s1. Value limited by wire bonding uc- Conduction losses reduced d- Switching losses reduced ro- Low threshold device
80A(1) 80A(1) te PDescription oleThe device is based on the latest generation of sST’s proprietary STripFET™ technology. An binnovative layout enables the device to also Oexhibit extremely low gate charge for the most -demanding requirements in high-frequency DCt(s)DC converters. It’s therefore ideal for high-density converters in Tele and puter capplications....