STD96N3LLH6 Datasheet | STMicroelectronics

N-channel 30 V, 0.0037 Ω, 80 A, DPAK STripFET™ VI DeepGATE™ Power MOSFET Features Type STD96N3LLH6 VDSS 30 V RDS(on) max 0.0042 Ω ID 80 A - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - High avalanche ruggedness - Low gate drive power losses Application - Switching applications - Automotive Description This product is an N-channel Power MOSFET that utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 3 1 DPAK Figure 1. Internal schematic diagram D (TAB or 2) G(1) Table 1. Device summary Order codes STD96N3LLH6 Mar...