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STD95P3LLH6AG - P-CHANNEL POWER MOSFET

General Description

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS STD95P3LLH6AG -30 V RDS(on) max. 6.9 mΩ ID -80 A PTOT 104 W Figure 1: Internal schematic diagram D(2, TAB).
  • Designed for automotive.

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STD95P3LLH6AG Automotive-grade P-channel -30 V, 5 mΩ typ., -80 A STripFET™ H6 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS STD95P3LLH6AG -30 V RDS(on) max. 6.9 mΩ ID -80 A PTOT 104 W Figure 1: Internal schematic diagram D(2, TAB)  Designed for automotive applications and AEC-Q101 qualified  Very low on-resistance  Very low gate charge  High avalanche ruggedness  Low gate drive power loss  Logic level Applications  Switching applications G(1) S(3) Order code STD95P3LLH6AG Description This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.