• Part: STE36N50-DA
  • Description: N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
  • Category: Diode
  • Manufacturer: STMicroelectronics
  • Size: 166.75 KB
Download STE36N50-DA Datasheet PDF
STMicroelectronics
STE36N50-DA
STE36N50-DA is N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package manufactured by STMicroelectronics.
- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA s s s s s V DSS 500 V R DS( on) < 0.14 Ω ID 36 A 4 3 s s s s s LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 1 2 ISOTOP INDUSTRIAL APPLICATIONS: s SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s ASYMMETRICAL HALF BRIDGE SMPS (WITH PLIMENTARY STE36N50-DK) INTERNAL...