Datasheet Details
| Part number | STE38NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 280.95 KB |
| Description | N - CHANNEL PowerMESH MOSFET |
| Datasheet | STE38NB50_STMicroelectronics.pdf |
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Overview: ® STE38NB50 N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET TYPE STE38NB50 s s s s s s s V DSS 500 V R DS(on) < 0.13 Ω ID 38 A TYPICAL RDS(on) = 0.
| Part number | STE38NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 280.95 KB |
| Description | N - CHANNEL PowerMESH MOSFET |
| Datasheet | STE38NB50_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE s ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS VDGR V GS ID ID I DM ( • ) P tot dv/dt (1) T stg Tj June 1998 Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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| Part Number | Description |
|---|---|
| STE38NB50F | N - CHANNEL PowerMESH MOSFET |
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