Datasheet Summary
N-channel 600 V, 530 mΩ typ., 10 A MDmesh II Power MOSFET in a TO-220FP package
3 2 1 TO-220FP D(2)
G(1) S(3)
AM01475v1_noZen_noTab
Features
Order code
RDS(on) max.
600 V
550 mΩ
10 A
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high...
