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STF22NM60 - N-CHANNEL Power MOSFET

General Description

This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs.

The resulting product exhibits even lower on-resistance, impressively high dv/dt and excellent avalanche characteristics.

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www.DataSheet4U.com STP22NM60 - STF22NM60 STB22NM60 - STB22NM60-1 - STW22NM60 N-CHANNEL 600V - 0.19 Ω - 22A TO-220/FP/D2PAK/I2PAK/TO-247 MDmesh™Power MOSFET ADVANCED DATA TYPE STP22NM60 STF22NM60 STB22NM60 STB22NM60-1 STW22NM60 s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 0.25 Ω < 0.25 Ω < 0.25 Ω < 0.25 Ω < 0.25 Ω Rds(on)*Qg 7.6 7.6 7.6 7.6 7.6 Ω*nC Ω*nC Ω*nC Ω*nC Ω*nC ID 22 22 22 22 22 A A A A A 3 1 2 1 3 2 TO-220 3 2 1 TO-220FP TYPICAL RDS(on) = 0.19Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-247 3 12 3 1 I2PAK D2PAK DESCRIPTION This improved version of MDmesh™ which is based on Multiple Drain process represents the new benchmark in high voltage MOSFETs.