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STF22NM60ND - N-CHANNEL POWER MOSFET

General Description

This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology.

Key Features

  • 3 2 1 TO-220FP Figure 1. Internal schematic diagram '  .
  •  6  $0Y Order code STF22NM60ND VDS @ TJmax 650 V RDS(on) max 0.22 Ω ID 17 A.
  • Designed for automotive.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF22NM60ND Automotive-grade N-channel 600 V, 0.17 Ω typ., 17 A FDmesh™ II Power MOSFET in a TO-220FP package Datasheet - production data Features 3 2 1 TO-220FP Figure 1. Internal schematic diagram '  *  6  $0Y Order code STF22NM60ND VDS @ TJmax 650 V RDS(on) max 0.22 Ω ID 17 A • Designed for automotive applications and AEC-Q101 qualified • Fast-recovery body diode • Low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • High dv/dt ruggedness Applications • Switching applications Description This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance.