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STF22NM60N - Power MOSFET

General Description

These devices are made using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Order codes STB22NM60N STF22NM60N STI22NM60N STP22NM60N STW22NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max. < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 16 A 16 A 16 A 16 A 16 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB22NM60N, STF22NM60N, STI22NM60N STP22NM60N, STW22NM60N N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Power MOSFET in D2PAK, TO-220FP, I2PAK, TO-220 and TO-247 Features Order codes STB22NM60N STF22NM60N STI22NM60N STP22NM60N STW22NM60N VDSS (@Tjmax) 650 V 650 V 650 V 650 V 650 V RDS(on) max. < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω < 0.22 Ω ID 16 A 16 A 16 A 16 A 16 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application Switching applications Description These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.