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STF8N65M5 - N-Channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout.

Key Features

  • Order codes VDS @ TJ max. RDS(on) max. ID STB8N65M5 STD8N65M5 710 V 0.60 Ω 7A STF8N65M5.
  • Extremely low RDS(on).
  • Low gate charge and input capacitance.
  • Excellent switching performance.
  • 100% avalanche tested PTOT 70 W 70 W 25 W G(1) S(3).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB8N65M5, STD8N65M5, STF8N65M5 Datasheet N-channel 650 V, 0.56 Ω typ., 7 A MDmesh M5 Power MOSFETs in a D²PAK, DPAK and TO-220FP packages TAB 2 3 1 D2PAK TAB 23 1 DPAK 3 2 1 TO-220FP D(2, TAB) Features Order codes VDS @ TJ max. RDS(on) max. ID STB8N65M5 STD8N65M5 710 V 0.60 Ω 7A STF8N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested PTOT 70 W 70 W 25 W G(1) S(3) Applications • Switching applications AM01475v1_noZen Description These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout.