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STF8N65M5 - N-Channel MOSFET

Features

  • Excellent switching performance.
  • Easy to drive.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STF8N65M5

Datasheet Details

Part number STF8N65M5
Manufacturer INCHANGE
File Size 196.88 KB
Description N-Channel MOSFET
Datasheet download datasheet STF8N65M5 Datasheet
Additional preview pages of the STF8N65M5 datasheet.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor STF8N65M5 ·FEATURES ·Excellent switching performance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=100℃ Drain Current-Single Pulsed ±25 7 4.4 28 PD Total Dissipation 25 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 5 62.5 UNIT ℃/W ℃/W isc website：www.iscsemi.
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