STGB10NC60HDT4 Description
These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. STGB10NC60HDT4, STGP10NC60HD Electrical ratings 1 Electrical ratings Table.
STGB10NC60HDT4 Key Features
- Low Cres / Cies ratio (no cross-conduction susceptibility)
- Very soft ultra-fast recovery antiparallel diode