STMicroelectronics STGB10NC60KDT4
This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.| Part No. | STGB10NC60KDT4 |
|---|---|
| Datasheet | STGB10NC60KDT4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V short-circuit rugged IGBT |
| Buy | Stock & Price |
FEATURES
● Lower on voltage drop (VCE(sat))● Lower Cres / Cies ratio (no cross-conduction susceptibility)
● Very soft ultra-fast recovery antiparallel diode
● Short-circuit withstand time 10 μs
APPLICATIONS
● High frequency motor controls● SMPS and PFC in both hard switch and resonant topologies
● Motor drives
DESCRIPTION
These devices are very fast IGBTs developed using advanced PowerMESH technology. Product status links STGB10NC60KDT4 STGD10NC60KDT4 STGF10NC60KD STGP10NC60KD DS4320 - Rev 9 - May 2025 For further information, contact your local STMicroelectronics sales office. STGB10NC60KDT4, STGD10NC60KDT4, STGF10NC60KD, STGP10NC60KD Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter D²PAK, TO-220 Value DPAK VCES Collector-emitter voltage (VGE = 0 V) 600 Continuous collector current at TC = 25 °C 20 IC(1) Continuous collector current at TC = 100 °C 10 ICL(2) Turn-off latching current 30 ICP(3) Pulsed collector current 30 VGE Gate-emitter volt...
