STGB10NC60KDT4 Description
These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. These devices are well-suited for resonant or soft-switching applications.
STGB10NC60KDT4 Key Features
- Lower Cres / Cies ratio (no cross-conduction susceptibility)
- Very soft ultra-fast recovery antiparallel diode
- Short-circuit withstand time 10 μs