STGB10NC60KDT4
Overview
These devices are very fast IGBTs developed using advanced PowerMESH technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
- Lower on voltage drop (VCE(sat))
- Lower Cres / Cies ratio (no cross-conduction susceptibility)
- Very soft ultra-fast recovery antiparallel diode
- Short-circuit withstand time 10 μs
