Datasheet Details
| Part number | STGB20NB32LZ |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 504.15 KB |
| Description | IGBT |
| Datasheet |
 STGB20NB32LZ Datasheet
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| Part number | STGB20NB32LZ |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 504.15 KB |
| Description | IGBT |
| Datasheet |
STGB20NB32LZ Datasheet
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Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.
The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection.
APPLICATIONS s AUTOMOTIVE IGNITION INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) Eas Ptot ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25°C Collector Current (continuous) at Tc = 100°C Collector Current (pulsed) Single Pulse Energy Tc = 25°C Total Dissipation at Tc = 25°C Derating Factor ESD (Human Body Model) Storage Temperature Max.
STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE STGB20NB32LZ STGB20NB32LZ-1 s s s s s s VCES CLAMPED CLAMPED VCE(sat) < 2.0 V < 2.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
STGB20NB32LZ-1 | IGBT | STMicroelectronics |
| Part Number | Description |
|---|---|
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