Datasheet Summary
STGB20NB32LZ STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A
- D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE
VCES
VCE(sat)
STGB20NB32LZ CLAMPED < 2.0 V STGB20NB32LZ-1 CLAMPED < 2.0 V
20 A 20 A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE t(s) s LOW ON-VOLTAGE DROP s HIGH CURRENT CAPABILITY uc s HIGH VOLTAGE CLAMPING FEATURE Prod t(s) DESCRIPTION lete uc Using the latest high voltage technology based on a d patented strip layout, STMicroelectronics has so ro designed an advanced family of IGBTs, the b P PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener
- O te exhibits a very precise active clamping while the ) le gate-emitter zener supplies...