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STGB20NB32LZ-1 - IGBT

Download the STGB20NB32LZ-1 datasheet PDF. This datasheet also covers the STGB20NB32LZ variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

performances.

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Note: The manufacturer provides a single datasheet file (STGB20NB32LZ_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for STGB20NB32LZ-1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STGB20NB32LZ-1. For precise diagrams, and layout, please refer to the original PDF.

STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB20NB32LZ CLAMPED < 2.0 V STGB20NB32LZ-1 CLAMP...

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YPE VCES VCE(sat) IC STGB20NB32LZ CLAMPED < 2.0 V STGB20NB32LZ-1 CLAMPED < 2.0 V 20 A 20 A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE t(s) s LOW ON-VOLTAGE DROP s HIGH CURRENT CAPABILITY uc s HIGH VOLTAGE CLAMPING FEATURE Prod t(s) DESCRIPTION lete uc Using the latest high voltage technology based on a d patented strip layout, STMicroelectronics has so ro designed an advanced family of IGBTs, the b P PowerMESH™ IGBTs, with outstanding performances. The built in collector-gate zener - O te exhibits a very precise active clamping while the ) le gate-emitter zener supplies an ESD protection.

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