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STGB20H60DF - 600V 20A high speed trench gate field-stop IGBT

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.

Key Features

  • High speed switching.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Short-circuit rated.
  • Ultrafast soft recovery antiparallel diode.

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Full PDF Text Transcription for STGB20H60DF (Reference)

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STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data TAB 3 2 1 TO-220 TAB 3 2 1 TO-220FP 3 1 D²PAK Feature...

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production data TAB 3 2 1 TO-220 TAB 3 2 1 TO-220FP 3 1 D²PAK Features • High speed switching • Tight parameters distribution • Safe paralleling • Low thermal resistance • Short-circuit rated • Ultrafast soft recovery antiparallel diode Applications • Motor control • UPS, PFC Figure 1. Internal schematic diagram Description G (1) C (2, TAB) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters.