STGB20H60DF Overview
G (1) C (2, TAB) This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum promise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in easier paralleling operation.
STGB20H60DF Key Features
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode