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STGD7NB120S-1
N-CHANNEL 7A - 1200V IPAK Power MESH™ IGBT
PRELIMINARY DATA
T YPE STGD7NB120S-1
s
V CES 1200 V
V CE(sat) < 2.1 V
IC 7 A
s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”S” identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz).