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STGW50NB60H Datasheet N-channel IGBT

Manufacturer: STMicroelectronics

Overview: ® STGW50NB60H N-CHANNEL 50A - 600V TO-247 PowerMESH™ IGBT PRELIMINARY DATA TYPE STGW50NB60H s V CES 600 V V CE(sat) < 2.

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.

The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).

APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s WELDING EQUIPMENTS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V ECR V GE IC IC ICM ( • ) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 o C Collector Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max.

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