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STGW50NB60M
N-CHANNEL 50A - 600V - TO-247 PowerMESH™ IGBT
TYPE STGW50NB60M
s s s s
VCES 600 V
VCE(sat)(25°C) < 1.9 V
IC 50 A
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY
2 1
3
TO-247 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "M" identifies a family optimized to achieve very low saturation on voltage for frequency applications <10 KHz.
STGW50NB60M Datasheet
