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STGW50NB60M Datasheet N-channel IGBT

Manufacturer: STMicroelectronics

Overview: STGW50NB60M N-CHANNEL 50A - 600V - TO-247 PowerMESH™ IGBT TYPE STGW50NB60M s s s s VCES 600 V VCE(sat)(25°C) < 1.

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

The suffix "M" identifies a family optimized to achieve very low saturation on voltage for frequency applications <10 KHz.

INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s MOTOR CONTROL s WELDING EQUIPMENTS ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max.

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