Datasheet Summary
STH10NA50/FI STW10NA50
- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STH10NA50 STH10NA50FI STW10NA50 s s s s s s s
V DSS 500 V 500 V 500 V
R DS( on) < 0.8 Ω < 0.8 Ω < 0.8 Ω
ID 9.6 A 5.6 A 9.6 A
TO-247
TYPICAL RDS(on) = 0.7 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD
3 2 1
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching...