Datasheet Summary
N-CHANNEL 600V
- 0.6Ω
- 10A
- TO-247/ISOWATT218 PowerMesh™II MOSFET
TYPE STW10NC60 STH10NC60FI s s s s s
STW10NC60 STH10NC60FI
VDSS 600 V 600 V
RDS(on) < 0.75 Ω < 0.75 Ω
ID 10 A 10 A (- )
TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-247
3 2 1
2 1
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS)...