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STI50DE100 - Hybrid Emitter Switched Bipolar Transistor ESBT

General Description

The STI50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology.

The STI50DE100 is designed for use in industrial converters and/or welding equipment.

Key Features

  • VCS(ON) 1.3 V.
  • IC 50 A RCS(ON) 0.026 W High voltage / high current Cascode configuration Ultra low equivalent on resistance Very fast-switch up to 150 kHz Ultra low Ciss Low dynamic VCS(ON) 1 2 3 4.
  • I4PAC-4L.

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www.DataSheet4U.com STI50DE100 Hybrid Emitter Switched Bipolar Transistor ESBT® 1000 V - 50 A - 0.026 Ω Preliminary Data General features VCS(ON) 1.3 V ■ IC 50 A RCS(ON) 0.026 W High voltage / high current Cascode configuration Ultra low equivalent on resistance Very fast-switch up to 150 kHz Ultra low Ciss Low dynamic VCS(ON) 1 2 3 4 ■ ■ ■ ■ I4PAC-4L Applications ■ ■ Internal schematic diagrams Industrial converters Welding Description The STI50DE100 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STI50DE100 is designed for use in industrial converters and/or welding equipment.