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STK2N80

STK2N80 is N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR manufactured by STMicroelectronics.
STK2N80 datasheet preview

STK2N80 Datasheet

Part number STK2N80
Download STK2N80 Datasheet (PDF)
File Size 184.00 KB
Manufacturer STMicroelectronics
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STK2N80 page 2 STK2N80 page 3

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STK2N80 Distributor

STK2N80 Description

Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 20 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10V Test Conditions ID = 250 µ A ID = 1 A 2.1 Min. 4 7 Unit V Ω A V DS > ID( on) x RD S(on) max V GS...

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