Datasheet4U Logo Datasheet4U.com

STK2NA60 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STK200 Flash MCU Starter Kit User Guide Manual Atmel
STK2025 (STKxxxx) Output Stage of AF Power Amp ETC
STK2029 (STKxxxx) Output Stage of AF Power Amp ETC
STK2030 Power Amp ETC
STK2038II POWER AMPLIFIER ETC

Other Datasheets by STMicroelectronics

Part Number Description
STK2N50 N-Channel Enhancement Mode Power MOS Transistor
STK2N80 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STK22N05 N-Channel Transistor
STK22N06 N-Channel Transistor
STK800 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STK2NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STK2NA60 s s s s s s s V DSS 600 V R DS( on) < 8Ω ID 1.9 A TYPICAL RDS(on) = 7.2 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD SOT-82 1 2 3 1 2 3 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.