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STL17N3LLH6 - N-Channel Power MOSFET

General Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

Key Features

  • Type STL17N3LLH6 VDSS 30 V RDS(on) max 0.0045 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Figure 1. Internal schematic diagram PowerFLAT™ (3.3 x 3.3).

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www.DataSheet4U.com STL17N3LLH6 N-channel 30 V, 0.0038 Ω , 17 A PowerFLATTM(3.3x3.3) STripFETTM VI DeepGATETM Power MOSFET Features Type STL17N3LLH6 VDSS 30 V RDS(on) max 0.0045 Ω ID 17 A (1) 1. The value is rated according Rthj-pcb ■ ■ ■ ■ ■ RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Figure 1. Internal schematic diagram PowerFLAT™ (3.3 x 3.3) Application ■ Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.