STL17N3LLH6
Overview
This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in a standard package, that makes it suitable for the most demanding DC-DC converter applications, where high power density has to be achieved.
- The value is rated according Rthj-pcb * * * *
- RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate charge Figure
- Internal schematic diagram PowerFLAT™ (3.3 x 3.3)
