Click to expand full text
®
STN2NE10
N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223 STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STN2NE10
s s s s s
V DSS 100 V
R DS(on) < 0.4 Ω
ID 2A
TYPICAL RDS(on) = 0.33 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION
2
DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™ " stip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
www.DataSheet4U.com
1
SOT-223
2
3
APPLICATIONS s DC MOTOR CONTROL (DISK DRIVES,etc.