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STN2NE10L - N-Channel Power MOSFET

General Description

du This Power MOSFET is the latest development of ro STMicroelectronics unique "Single Feature P Size™" strip-based process.

Key Features

  • Type VDSS (@Tjmax) RDS(on) ID 2 STN2NE10L 100V.

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Full PDF Text Transcription for STN2NE10L (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STN2NE10L. For precise diagrams, and layout, please refer to the original PDF.

STN2NE10L N-channel 100V - 0.33Ω -2A - SOT-223 STripFET™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID 2 STN2NE10L 100V <0.4Ω 1.8A 3 ■ Exceptional dv/dt cap...

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jmax) RDS(on) ID 2 STN2NE10L 100V <0.4Ω 1.8A 3 ■ Exceptional dv/dt capability 2 1 ■ Avalanche rugged technology SOT-223 ■ 100% avalanche tested ) ■ Low threshold drive ct(s Description du This Power MOSFET is the latest development of ro STMicroelectronics unique "Single Feature P Size™" strip-based process. The resulting transistor shows extremely high packing density te for low on-resistance, rugged avalanche le characteristics and less critical alignment steps o therefore a remarkable manufacturing bs reproducibility.

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