STN2NE10L Datasheet | STMicroelectronics

N-channel 100V - 0.33Ω -2A - SOT-223 STrip FET™ Power MOSFET General Features Type VDSS (@Tjmax) RDS(on) 100V <0.4Ω 1.8A - Exceptional dv/dt capability - Avalanche rugged technology SOT-223 - 100% avalanche tested ) - Low threshold drive ct(s Description du This Power MOSFET is the latest development of ro STMicroelectronics unique "Single Feature P Size™" strip-based process. The resulting transistor shows extremely high packing density te for low on-resistance, rugged avalanche le characteristics and less critical alignment steps o therefore a remarkable manufacturing bs reproducibility. Internal schematic diagram ct(s) - O Applications du - Switching application Obsolete Pro Order codes Part number STN2NE10L Marking N2NE10L Package SOT-223 Packaging Tape & reel February 2007 Rev 5 1/12 .st. Contents Contents...