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STP13NK60FP - N-channel Power MOSFET

Download the STP13NK60FP datasheet PDF. This datasheet also covers the STP13NK60Z variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/14 STP13NK60.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP13NK60Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STP13NK60Z N-channel Power MOSFET
STP13NK60ZFP N-channel Power MOSFET
STP13NK50Z Power MOSFETs
STP13N95K3 Power MOSFETs
STP13NM60N N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STP13NK60Z/FP, STB13NK60Z STB13NK60Z-1, STW13NK60Z N-CHANNEL 600V-0.48Ω-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE STP13NK60Z STP13NK60ZFP STB13NK60Z STB13NK60Z-1 STW13NK60Z s s s s s s VDSS 600 600 600 600 600 V V V V V RDS(on) < 0.55 Ω < 0.55 Ω < 0.55 Ω < 0.55 Ω < 0.55 Ω ID 13 13 13 13 13 A A A A A Pw 150 W 35 W 150 W 150 W 150 W TO-220 3 1 2 TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220FP 3 2 1 TO-247 3 12 3 1 D2PAK I2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.