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STP13NM60N - N-CHANNEL POWER MOSFET

General Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology.

These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge.

Key Features

  • 3 12 TO-220FP TAB 1 23 I2PAK TAB TO-220 1 23 3 12 IPAK Order codes VDS RDS(on) max. STF13NM60N STI13NM60N STP13NM60N 600 V 360 mΩ STU13NM60N.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance ID 11 A D(2, TAB).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF13NM60N, STI13NM60N STP13NM60N, STU13NM60N Datasheet N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages TAB Features 3 12 TO-220FP TAB 1 23 I2PAK TAB TO-220 1 23 3 12 IPAK Order codes VDS RDS(on) max. STF13NM60N STI13NM60N STP13NM60N 600 V 360 mΩ STU13NM60N • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance ID 11 A D(2, TAB) Applications • Switching applications G(1) S(3) NG1D2TS3 Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest onresistance and gate charge.