STMicroelectronics STP13NM60ND
This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology. It is ideal for bridge topologies and ZVS phase-shift converters.| Part No. | STP13NM60ND |
|---|---|
| Datasheet | STP13NM60ND Download |
| Manufacturer |  STMicroelectronics |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP13NM60ND 650 V 380 mΩ 11 A● Fast-recovery body diode
● Low gate charge and input capacitance
● Low on-resistance RDS(on)
● 100% avalanche tested
● High dv/dt ruggedness
APPLICATIONS
● Switching applications G(1)DESCRIPTION
S(3) Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. Product status link STP13NM60ND Product summary Order code STP13NM60ND Marking 13NM60ND Package TO-220 Packing Tube DS14316 - Rev 1 - May 2023 For further information contact your local STMicroelectronics sales office. STP13NM60ND Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Maximum operating junction temperature 1.
