STP13NM60N
Overview
- Typical RDS(on)=0.28Ω
- Low gate input resistance
- 100% avalanche tested
- Low input capacitance and gate charge
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | STP13NM60N |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 185.58 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| STP13NM60N | STMicroelectronics | N-CHANNEL POWER MOSFET |
| STP13NM60ND | STMicroelectronics | N-Channel Power MOSFET |