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STP13NM60ND - N-Channel MOSFET

Features

  • Drain Current ID= 11A@ TC=25℃.
  • Drain Source Voltage- : VDSS=600V(Min).
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – STP13NM60ND

Datasheet Details

Part number STP13NM60ND
Manufacturer INCHANGE
File Size 203.13 KB
Description N-Channel MOSFET
Datasheet download datasheet STP13NM60ND Datasheet
Additional preview pages of the STP13NM60ND datasheet.

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Full PDF Text Transcription

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isc N-Channel Mosfet Transistor INCHANGE Semiconductor STP13NM60ND ·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±25 V ID Drain Current-continuous@ TC=25℃ 11 A IDM Pulse Drain Current 44 A Ptot Total Dissipation@TC=25℃ 110 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.14 ℃/W isc website：www.
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