| Part Number | STP13NM60ND Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
INCHANGE Semiconductor
STP13NM60ND
·FEATURES ·Drain Current ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·100% avalanche tested ·Mini.
*Drain Current ID= 11A@ TC=25℃ *Drain Source Voltage- : VDSS=600V(Min) *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *APPLICATIONS *Switching applications *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE . |
STP13NM60ND Datasheet and Specifications PDF
The STP13NM60ND is a N-Channel MOSFET.
| Part Number | STP13NM60ND Datasheet |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
S(3)
This FDmesh II Power MOSFET with fast-recovery body diode is produced using
AM01475v1_noZen
MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-.
TAB
TO-220
1 23
D(2, TAB)
Order code
VDS at TJ max.
RDS(on) max.
ID
STP13NM60ND
650 V
380 mΩ
11 A
* Fast-recovery body diode * Low gate charge and input capacitance * Low on-resistance RDS(on) * 100% avalanche tested * High dv/dt ruggedness Applications * Switching applications G. |