STP14NK60Z Datasheet | STMicroelectronics

STB14NK60Z, STP14NK60Z, STW14NK60Z N-channel 600 V, 0.45 Ω typ., 13.5 A Super MESH™ Power MOSFETs in I PAK, TO-220 and TO-247 packages - obsolete product Features Order codes RDS(on) max. PTOT 123 t(s)I2PAK 3 2 1 TO-220 lete Produc TO-247 bso Figure 1. Internal schematic diagram - OD(2, TAB) duct(s)G(1) solete Pro S(3) Ob AM01476v1 STB14NK60Z-1 STP14NK60Z 600 V 0.5 Ω 13.5 A 160 W STW14NK60Z - Extremely high dv/dt capability - 100% avalanche tested - Gate charge minimized - Very low intrinsic capacitances - Very good manufacturing repeatability - Zener-protected Applications - Switching applications Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' Super MESH™ technology, achieved through optimization of ST's well established strip-based Power MESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Order codes STB14NK60Z-1 STP14NK60Z STW14NK60Z Table 1. Device summary Marking Package...