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STP16NK65Z-S - N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET

Download the STP16NK65Z-S datasheet PDF (STP16NK65Z included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel 650v-0.38ohm-13a to-220 i2spak zener - protected supermesh mosfet.

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • TYPE STP16NK65Z STB16NK65Z-S s s s s s s Figure 1: Package ID 13 A 13 A Pw 190 W 190 W VDSS 650 V 650 V RDS(on) < 0.50 Ω < 0.50 Ω.

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Note: The manufacturer provides a single datasheet file (STP16NK65Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number STP16NK65Z-S
Manufacturer STMicroelectronics
File Size 286.33 KB
Description N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET
Datasheet download datasheet STP16NK65Z-S Datasheet

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Full PDF Text Transcription

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STP16NK65Z STB16NK65Z-S N-CHANNEL 650V - 0.38Ω - 13A TO-220 / I2SPAK Zener - Protected SuperMESH™ MOSFET Table 1: General Features TYPE STP16NK65Z STB16NK65Z-S s s s s s s Figure 1: Package ID 13 A 13 A Pw 190 W 190 W VDSS 650 V 650 V RDS(on) < 0.50 Ω < 0.50 Ω TYPICAL RDS(on) = 0.38Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 12 3 1 2 TO-220 I²SPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
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