Datasheet Details
| Part number | STP16NB25 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 105.30 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STP16NB25_STMicroelectronics.pdf |
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Overview: ® STP16NB25 STP16NB25FP N - CHANNEL 250V - 0.220Ω - 16A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P16NB25 ST P16NB25FP s s s s s V DSS 250 V 250 V R DS(on) < 0.28 Ω < 0.28 Ω ID 16 A 8 A TYPICAL RDS(on) = 0.
| Part number | STP16NB25 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 105.30 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STP16NB25_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC-DC & DC-AC CONVERTERS FOR TELE, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1) V ISO Ts tg Tj March 1999 Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max.
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