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STP16NE06L STP16NE06L/FP
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE™ POWER MOSFET
TARGET DATA TYPE ST P16NE06L ST P16NE06LFP
s s s s s s
V DSS 60 V 60 V
R DS(on) < 0.12 Ω < 0.12 Ω
ID 16 A 11 A
TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
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DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP16NE06L Datasheet
