STP16NE06L Datasheet | STMicroelectronics

STP16NE06L STP16NE06L/FP - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE™ POWER MOSFET TARGET DATA TYPE ST P16NE06L ST P16NE06LFP s s s s s s V DSS 60 V 60 V R DS(on) < 0.12 Ω < 0.12 Ω ID 16 A 11 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175o C OPERATING TEMPERATURE HIGH d V/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 1 2 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION...