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STP16NE06FP - N-CHANNEL Power MOSFET

Download the STP16NE06FP datasheet PDF. This datasheet also covers the STP16NE06 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STP16NE06_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STP16NE06 N-CHANNEL Power MOSFET
STP16NE06L N-CHANNEL Power MOSFET
STP16N10L N-CHANNEL Power MOSFET
STP16NB25 N-CHANNEL Power MOSFET
STP16NB25FP N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® STP16NE06 STP16NE06FP N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET™ POWER MOSFET PRELIMINARY DATA TYPE STP16NE06 STP16NE06FP s s s s s s V DSS 60 V 60 V R DS(on) < 0.100 Ω < 0.100 Ω ID 16 A 11 A TYPICAL RDS(on) = 0.08 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220 3 1 2 1 2 3 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.