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STP16NE06 STP16NE06FP
N - CHANNEL 60V - 0.08 Ω - 16A - TO-220/TO-220FP STripFET™ POWER MOSFET
PRELIMINARY DATA TYPE STP16NE06 STP16NE06FP
s s s s s s
V DSS 60 V 60 V
R DS(on) < 0.100 Ω < 0.100 Ω
ID 16 A 11 A
TYPICAL RDS(on) = 0.08 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 175oC OPERATING TEMPERATURE HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION TO-220
3 1 2
1 2
3
DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size" process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP16NE06 Datasheet
