STP19NB20 Datasheet | STMicroelectronics

.. N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK Power MESH™ MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 s s s s s - STP19NB20FP STB19NB20-1 VDSS 200 V 200 V 200 V RDS(on) < 0.18 Ω < 0.18 Ω < 0.18 Ω ID 19 A 10 A 19 A 3 1 2 TYPICAL RDS(on) = 0.15 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR TELE, INDUSTRIAL AND CONSUMER ENVIRONMENT...