STP21N05LFI datasheet by STMicroelectronics.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | STP21N05LFI |
|---|---|
| Datasheet | STP21N05LFI STP21N05L Datasheet (PDF) |
| File Size | 197.49 KB |
| Manufacturer | STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 15 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current Test Conditions ID = 250 µ A Min.
View all STMicroelectronics datasheets
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