STP21N06L datasheet by STMicroelectronics.
| Part number | STP21N06L |
|---|---|
| Datasheet | STP21N06L_STMicroelectronics.pdf |
| File Size | 197.54 KB |
| Manufacturer | STMicroelectronics |
| Description | N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V D S = 0) V GS = ± 15 V T c = 125 oC ON (∗ ) Symbol V G S(th) R DS( on) I D( on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current Test Conditions ID = 250 µ A Tc = 100o C 21 Min. 2.5 0.085 0.17 Unit V Ω Ω A V GS = 5 V I D = 10.5 A V GS =...
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