STP22NM60N Overview
These devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 1 TO-220FP TO-247 3 2 1 3 2 1 TO-220 Figure 1. Internal schematic diagram TO-220FP I²PAK TO-220 TO-247 !-V Packaging Tape and reel Tube January 2011 Doc ID 15853 Rev 4 1/23 Contents STB/F/I/P/W22NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2
STP22NM60N Key Features
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
