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STP24NF10 - N-Channel Power MOSFET

Datasheet Summary

Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.

Features

  • Type VDS RDS(on) max. ID STP24NF10 100 V 60 mΩ 26 A.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge D(2, TAB).

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Datasheet Details

Part number STP24NF10
Manufacturer STMicroelectronics
File Size 326.55 KB
Description N-Channel Power MOSFET
Datasheet download datasheet STP24NF10 Datasheet
Additional preview pages of the STP24NF10 datasheet.

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Full PDF Text Transcription

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STP24NF10 Datasheet N-channel 100 V, 55 mΩ typ., 26 A STripFET II Power MOSFET in a TO-220 package TAB TO-220 1 23 Features Type VDS RDS(on) max. ID STP24NF10 100 V 60 mΩ 26 A • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge D(2, TAB) Applications • Switching applications G(1) S(3) AM01475v1_noZen Description This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
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