STP24NF10 Datasheet | STMicroelectronics

N-channel 100 V, 55 mΩ typ., 26 A STrip FET II Power MOSFET in a TO-220 package TO-220 1 23 Features Type RDS(on) max. 100 V 60 mΩ 26 A - Exceptional dv/dt capability - 100% avalanche tested - Low gate charge D(2, TAB) Applications - Switching applications G(1) S(3) AM01475v1_no Zen Description This Power MOSFET has been developed using STMicroelectronics' unique STrip FET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for tele and puter applications, and applications with low gate charge driving requirements. Product status link STP24NF10 Product summary Order code Marking P24NF10 Package TO-220 Packing Tube DS1936 - Rev...