Datasheet Details
| Part number | STP3NC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 152.42 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STP3NC60_STMicroelectronics.pdf |
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Overview: www.DataSheet4U.com N-CHANNEL 600V - 3.3Ω - 3A TO-220/TO-220FP PowerMesh™ II MOSFET TYPE STP3NC60 STP3NC60FP s s s s s STP3NC60 STP3NC60FP VDSS 600 V 600V RDS(on) <3.6 Ω <3.6 Ω ID 3A 2A TYPICAL RDS(on) = 3.
| Part number | STP3NC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 152.42 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STP3NC60_STMicroelectronics.pdf |
|
|
|
The PowerMESH™ II is the evolution of the first generation of MESH OVERLAY™ .
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER INTERNAL SCHEMATIC DIAGRAM www.DataSheet4U.com ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100° C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.
| Part Number | Description |
|---|---|
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| STP3NC70Z | N-CHANNEL MOSFET |
| STP3NC70ZFP | N-CHANNEL MOSFET |
| STP3NC90Z | N-CHANNEL MOSFET |
| STP3NC90ZFP | N-CHANNEL MOSFET |
| STP3N90 | N-Channel Enhancement Mode Power MOS Transistor |
| STP3N90FI | N-Channel Enhancement Mode Power MOS Transistor |
| STP3NA100 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP3NA100FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |