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STP3NC70Z Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: www.DataSheet4U.com N-CHANNEL 700V - 4.1Ω - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH™III MOSFET TYPE STP3NC70Z STP3NC70ZFP s s STP3NC70Z STP3NC70ZFP VDSS 700V 700V RDS(on) < 4.7Ω < 4.7Ω ID 2.5 A 2.5 A s s s TYPICAL RDS(on) = 4.

General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.

APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt (1) VISO Tstg Tj June 2001 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (DC) www.DataSheet4U.com Value STP3NC70Z 700 700 ± 25 2.5 1.6 10 65 0.52 ±50 1.5 3 –65 to 150 150 (*) Limited by Maximum Temperature allowed Unit V V V 2.5 (*) 1.6 (*) 10 35 0.28 A A A W W/°C mA KV V/ns 2500 V °C °C 1/10 STP3NC70ZFP Gate source ESD(HBM-C=100pF, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.

Key Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 www. Dat.

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