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STP3NC70Z - N-CHANNEL MOSFET

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 www. Dat.

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Full PDF Text Transcription

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www.DataSheet4U.com N-CHANNEL 700V - 4.1Ω - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH™III MOSFET TYPE STP3NC70Z STP3NC70ZFP s s STP3NC70Z STP3NC70ZFP VDSS 700V 700V RDS(on) < 4.7Ω < 4.7Ω ID 2.5 A 2.5 A s s s TYPICAL RDS(on) = 4.1Ω EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED TO-220 TO-220FP 3 1 2 DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
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