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STP4NB100FP - N-CHANNEL MOSFET

This page provides the datasheet information for the STP4NB100FP, a member of the STP4NB100 N-CHANNEL MOSFET family.

Datasheet Summary

Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet preview – STP4NB100FP

Datasheet Details

Part number STP4NB100FP
Manufacturer STMicroelectronics
File Size 109.76 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STP4NB100FP Datasheet
Additional preview pages of the STP4NB100FP datasheet.

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Full PDF Text Transcription

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® STP4NB100 STP4NB100FP N - CHANNEL 1000V - 4Ω - 3.8A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE ST P4NB100 ST P4NB100FP s s s s s V DSS 1000 V 1000 V R DS(on) < 4.4 Ω < 4.4 Ω ID 3.8 A 3.8 A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
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